A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure

High magnetic field tunneling transport in a double quantum well-triple barrier resonant tunneling diode

We have measured the magnetotransport of double GaAs quantum well-triple AlAs barrier resonant tunneling heterostructures in pulsed magnetic fields up to 48 T, and temperatures down to 0.3 K. The tunneling structure is designed for a near-simultaneous (triple) resonance, under bias, of the quantum well energy levels and the lowest quasi-2D emitter state. The fan chart of the I(V) resonances is ...

Device and Circuit Performance Simulation of a New Nano- Scaled Side Contacted Field Effect Diode Structure

A new side-contacted field effect diode (S-FED) structure has beenintroduced as a modified S-FED, which is composed of a diode and planar double gateMOSFET. In this paper, drain current of modified and conventional S-FEDs wereinvestigated in on-state and off-state. For the conventional S-FED, the potential barrierheight between the source and the channel is observed to b...

Heterostructure and Quantum Well Physics

Piezoelectric Effect in GaInN/GaN Heterostructure and Quantum Well Structure

The Effect of Structural Parameters on the Electronic States and Oscillator Strength of a Resonant Tunneling Quantum Well Infrared Photodetector

In this paper a resonant tunnelling quantum well infrared photodetector (RT-QWIP) is discussed. Each period of this photodetector structure comprises of a resonant tunnelling structure (AlAs/AlGaAs/AlAs) nearby a quantum well (AlGaAs/GaAs). In this photodetector, photocurrent is produced when an electron makes a transition from the ground state of the well to an excited state which is coupled t...